2N3860

30V,100mA,360mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise

Case Type: TO-92

Collector-Base Breakdown Voltage (BV_CBO)

30 V

Collector-Base Cutoff Current (I_CBO)

500 nA

Collector-Base Cutoff Current (I_CBO)

10 µA

Collector-Base Voltage (V_CBO)

30 V

Collector-Emitter Breakdown Voltage (BV_CEO)

30 V

Collector-Emitter Saturation Voltage (V_CE(SAT))

125 mV

Collector-Emitter Voltage (V_CEO)

30 V

Continuous Collector Current (I_C)

100 mA

Current Gain-Bandwidth Product (f_T)

90 — 250 MHz

DC Current Gain (h_FE)

150 — 300

Emitter-Base Breakdown Voltage (BV_EBO)

5 V

Emitter-Base Cutoff Current (I_EBO)

100 nA

Emitter-Base Voltage (V_EBO)

4 V

Input Capacitance (C_ib)

10 pF

Junction Temperature (T_j)

-55 — 125 °C

Output Capacitance (C_ob)

4 pF

Power Dissipation (P_D)

360 mW

Storage Temperature (T_stg)

-55 — 150 °C

Part	Package	Status	Description	ECCN Code	HTS Code	Termination
2N3860	Box@2,500	Active	30V,100mA,360mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise	EAR99	8541.21.0075	LEAD or TIN
2N3860 APM	Ammo@2,000	Active	30V,100mA,360mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise	EAR99	8541.21.0075	LEAD or TIN
2N3860 TRE	Tape & Reel@2,000	Active	30V,100mA,360mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise	EAR99	8541.21.0075	LEAD or TIN


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