2N3866A

30V,400mA,5W Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator

Case Type: TO-39

Amplifier Power Gain (Gpe)
10 dB
Collector Efficiency (η)
45 %
Collector-Base Breakdown Voltage (BVCBO)
55 V
Collector-Base Voltage (VCBO)
55 V
Collector-Emitter Breakdown Voltage (BVCER)
55 V
Collector-Emitter Breakdown Voltage (BVCEO)
30 V
Collector-Emitter Cutoff Current (ICEO)
20 µA
Collector-Emitter Cutoff Current (ICEV)
100 µA
Collector-Emitter Cutoff Current (ICEV)
5 mA
Collector-Emitter Saturation Voltage (VCE(SAT))
1 V
Collector-Emitter Voltage (VCEO)
30 V
Continuous Base Current (IB)
200 mA
Continuous Collector Current (IC)
400 mA
Current Gain-Bandwidth Product (fT)
800 MHz
DC Current Gain (hFE)
25 — 200
DC Current Gain (hFE)
5
Emitter-Base Breakdown Voltage (BVEBO)
3.5 V
Emitter-Base Cutoff Current (IEBO)
100 µA
Emitter-Base Voltage (VEBO)
3.5 V
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
3 pF
Power Dissipation (PD)
5 W
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case (ΘJC)
35 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N3866A Box@500 Discontinued 30V,400mA,5W Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator EAR99 8541.29.0075 PBFREE

Resources

2N3866_SERIES.PDF Device Datasheet
Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
Material Composition:TO-39 Material Composition
Package Detail Document:TO-39 Package Detail Document
Product EOL Notice:RF TRANSISTOR DIE Product EOL Notice
Product Reliability Data:TO-39 Package Reliability Product Reliability Data

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