2N4013

30V,500mA,360mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch

Case Type: TO-18

Base-Emitter Saturation Voltage (VBE(SAT))
760 mV
Base-Emitter Saturation Voltage (VBE(SAT))
860 mV
Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.8 — 1.1 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.7 V
Collector-Base Breakdown Voltage (BVCBO)
50 V
Collector-Base Cutoff Current (ICBO)
1.7 µA
Collector-Base Cutoff Current (ICBO)
120 µA
Collector-Base Voltage (VCBO)
50 V
Collector-Emitter Breakdown Voltage (BVCES)
50 V
Collector-Emitter Breakdown Voltage (BVCEO)
30 V
Collector-Emitter Cutoff Current (ICES)
10 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
260 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
320 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
420 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
650 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
750 mV
Collector-Emitter Voltage (VCES)
50 V
Collector-Emitter Voltage (VCEO)
30 V
Continuous Collector Current (IC)
500 mA
Current Gain-Bandwidth Product (fT)
300 MHz
DC Current Gain (hFE)
30
DC Current Gain (hFE)
60 — 150
DC Current Gain (hFE)
40
DC Current Gain (hFE)
35
DC Current Gain (hFE)
25
DC Current Gain (hFE)
30
DC Current Gain (hFE)
30
DC Current Gain (hFE)
20
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Voltage (VEBO)
6 V
Input Capacitance (Cib)
55 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
10 pF
Peak Collector Current (ICM)
1 A
Power Dissipation (PD)
360 mW
Power Dissipation (PD)
1.2 W
Storage Temperature (Tstg)
-65 — 200 °C
Turn Off Time (toff)
60 ns
Turn On Time (ton)
35 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N4013 Box@2,000 Discontinued 30V,500mA,360mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch EAR99 8541.21.0075 TIN

Resources

Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
LSSGP057.PDF Device Datasheet
Material Composition:TO-18 Material Composition
Package Detail Document:TO-18 Package Detail Document
Product EOL Notice:CP337V WAFER PROCESS Product EOL Notice
Product Reliability Data:TO-18 Package Reliability Product Reliability Data