2N4030

60V,1A,1.25W Through-Hole Transistor-Small Signal (<=1A) PNP High Current

Case Type: TO-39

Base-Emitter On Voltage (VBE(ON))
1.1 V
Base-Emitter On Voltage (VBE(ON))
1.2 V
Base-Emitter Saturation Voltage (VBE(SAT))
900 mV
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Cutoff Current (ICBO)
50 µA
Collector-Base Voltage (VCBO)
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Saturation Voltage (VCE(SAT))
150 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1 V
Collector-Emitter Voltage (VCEO)
60 V
Continuous Collector Current (IC)
1 A
DC Current Gain (hFE)
30
DC Current Gain (hFE)
40 — 120
DC Current Gain (hFE)
15
DC Current Gain (hFE)
25
DC Current Gain (hFE)
15
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
10 µA
Emitter-Base Voltage (VEBO)
5 V
Fall Time (tf)
50 ns
Input Capacitance (Cib)
110 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
20 pF
Power Dissipation (PD)
1.25 W
Power Dissipation (PD)
7 W
Small Signal Current Gain (hfe)
1 — 4
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
350 ns
Thermal Resistance Junction-Ambient (ΘJA)
140 °C/W
Thermal Resistance Junction-Case (ΘJC)
20 °C/W
Turn On Time (ton)
100 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N4030 Box@500 Active 60V,1A,1.25W Through-Hole Transistor-Small Signal (<=1A) PNP High Current EAR99 8541.29.0095 LEAD or TIN

Resources

2N4030.PDF Device Datasheet
Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
Material Composition:TO-39 Material Composition
Package Detail Document:TO-39 Package Detail Document
Product Reliability Data:TO-39 Package Reliability Product Reliability Data

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