2N4033

80V,1A,800mW Through-Hole Transistor-Small Signal (<=1A) PNP High Current

Case Type: TO-39

Base-Emitter On Voltage (VBE(ON))
1.1 V
Base-Emitter Saturation Voltage (VBE(SAT))
900 mV
Collector-Base Breakdown Voltage (BVCBO)
80 V
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Cutoff Current (ICBO)
50 µA
Collector-Base Voltage (VCBO)
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Saturation Voltage (VCE(SAT))
150 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1 V
Collector-Emitter Voltage (VCEO)
80 V
Continuous Collector Current (IC)
1 A
Current Gain-Bandwidth Product (fT)
150 — 400 MHz
DC Current Gain (hFE)
75
DC Current Gain (hFE)
100 — 300
DC Current Gain (hFE)
40
DC Current Gain (hFE)
70
DC Current Gain (hFE)
25
Emitter-Base Cutoff Current (IEBO)
10 µA
Emitter-Base Voltage (VEBO)
5 V
Fall Time (tf)
50 ns
Input Capacitance (Cib)
110 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
20 pF
Power Dissipation (PD)
800 mW
Power Dissipation (PD)
4 W
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
350 ns
Turn On Time (ton)
100 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N4033 Box@500 Active 80V,1A,800mW Through-Hole Transistor-Small Signal (<=1A) PNP High Current EAR99 8541.21.0075 LEAD or TIN
2N4033 TRAY Box@20 Active 80V,1A,800mW Through-Hole Transistor-Small Signal (<=1A) PNP High Current EAR99 8541.21.0075 PBFREE

Resources

2N4033.PDF Device Datasheet
Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
Material Composition:TO-39 Material Composition
Package Detail Document:TO-39 Package Detail Document
Product Reliability Data:TO-39 Package Reliability Product Reliability Data
Spice Model:Spice Model 2N4033 Spice Model

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