2N4104

60V,50mA,300mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise

Case Type: TO-18

Base-Emitter On Voltage (VBE(ON))
700 mV
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Cutoff Current (ICBO)
10 µA
Collector-Base Voltage (VCBO)
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Collector Current (IC)
50 mA
Current Gain-Bandwidth Product (fT)
90 — 540 MHz
DC Current Gain (hFE)
150
DC Current Gain (hFE)
400 — 800
DC Current Gain (hFE)
450
DC Current Gain (hFE)
500
Emitter-Base Breakdown Voltage (BVEBO)
7.5 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage (VEBO)
7.5 V
Input Capacitance (Cib)
6 pF
Input Impedance Common Emitter (hie)
12 — 42 kΩ
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
15 dB
Noise Figure (NF)
4 dB
Noise Figure (NF)
1 dB
Noise Figure (NF)
1 dB
Output Admittance Common Emitter (hoe)
8 — 60 µS
Output Capacitance (Cob)
4.5 pF
Power Dissipation (PD)
300 mW
Power Dissipation (PD)
1.2 W
Small Signal Current Gain (hfe)
500 — 1400
Storage Temperature (Tstg)
-65 — 200 °C
Voltage Feedback Ratio Common Emitter (hre)
0.8 x10-3

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N4104 Box@2,000 Active 60V,50mA,300mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise EAR99 8541.21.0075 LEAD or TIN

Resources

2N4104.pdf Device Datasheet
Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
Material Composition:TO-18 Material Composition
Package Detail Document:TO-18 Package Detail Document
Product Reliability Data:TO-18 Package Reliability Product Reliability Data
Spice Model:Spice Model 2N4104 Spice Model

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