2N4237

40V,3A,6W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

Case Type: TO-39

Base-Emitter On Voltage (VBE(ON))
1 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Collector-Base Cutoff Current (ICBO)
100 µA
Collector-Base Voltage (VCBO)
50 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICEV)
100 µA
Collector-Emitter Cutoff Current (ICEV)
1 mA
Collector-Emitter Cutoff Current (ICEO)
700 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
600 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Base Current (IB)
500 mA
Continuous Collector Current (IC)
3 A
Current Gain-Bandwidth Product (fT)
2 MHz
DC Current Gain (hFE)
30
DC Current Gain (hFE)
30 — 250
DC Current Gain (hFE)
30
DC Current Gain (hFE)
15
Emitter-Base Cutoff Current (IEBO)
500 µA
Emitter-Base Voltage (VEBO)
6 V
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
100 pF
Power Dissipation (PD)
6 W
Small Signal Current Gain (hfe)
30
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case (ΘJC)
29.2 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N4237 Box@500 Discontinued 40V,3A,6W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch EAR99 8541.29.0095 PBFREE

Resources

2N4237-4239.PDF Device Datasheet
Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
Material Composition:TO-39 Material Composition
Package Detail Document:TO-39 Package Detail Document
Process Change Notice:CP322 REPLACES CP312 Process Change Notice
Product EOL Notice:BFX34 Product EOL Notice
Product Reliability Data:TO-39 Package Reliability Product Reliability Data

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