2N4271

5W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage

Case Type: TO-39

Base-Emitter Saturation Voltage (V_BE(SAT))

1 V

Collector-Base Breakdown Voltage (BV_CBO)

175 V

Collector-Base Cutoff Current (I_CBO)

500 nA

Collector-Emitter Breakdown Voltage (BV_CEO)

140 V

Collector-Emitter Saturation Voltage (V_CE(SAT))

800 mV

DC Current Gain (h_FE)

20 — 140

Emitter-Base Breakdown Voltage (BV_EBO)

5 V

Junction Temperature (T_j)

-65 — 200 °C

Power Dissipation (P_D)

5 W

Storage Temperature (T_stg)

-65 — 200 °C

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
2N4271	Box@500		Active	5W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage	EAR99	8541.29.0095	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Bond Wire	Analytical Test Report
Analytical Test Report:Cap	Analytical Test Report
Analytical Test Report:Header	Analytical Test Report
Analytical Test Report:Header Assembly	Analytical Test Report
Analytical Test Report:Pure Tin Solder	Analytical Test Report
LSSGP063.PDF	Device Datasheet
Material Composition:TO-39	Material Composition
Package Detail Document:TO-39	Package Detail Document
Product Reliability Data:TO-39 Package Reliability	Product Reliability Data

AEM stands ready to assist with your latest design endeavors as your trusted partner.

AEM stands ready to assist with your latest design endeavors as your trusted partner.