2N4287

45V,50mA,360mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise

Case Type: TO-92

Base-Emitter Saturation Voltage (V_BE(SAT))

800 mV

Collector-Base Breakdown Voltage (BV_CBO)

45 V

Collector-Base Cutoff Current (I_CBO)

10 nA

Collector-Base Voltage (V_CBO)

45 V

Collector-Emitter Breakdown Voltage (BV_CEO)

45 V

Collector-Emitter Saturation Voltage (V_CE(SAT))

350 mV

Collector-Emitter Voltage (V_CEO)

45 V

Continuous Collector Current (I_C)

50 mA

Current Gain-Bandwidth Product (f_T)

40 MHz

DC Current Gain (h_FE)

100

DC Current Gain (h_FE)

150 — 600

Emitter-Base Breakdown Voltage (BV_EBO)

7 V

Emitter-Base Voltage (V_EBO)

7 V

Junction Temperature (T_j)

-65 — 150 °C

Noise Figure (NF)

5 dB

Output Capacitance (C_ob)

6 pF

Power Dissipation (P_D)

360 mW

Storage Temperature (T_stg)

-65 — 150 °C

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
2N4287	Box@2,500		Active	45V,50mA,360mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise	EAR99	8541.21.0095	LEAD or TIN


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