2N4390

120V,.5A,375mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch

Case Type: TO-18

Base-Emitter Saturation Voltage (VBE(SAT))
750 mV
Base-Emitter Saturation Voltage (VBE(SAT))
850 V
Collector-Base Breakdown Voltage (BVCBO)
120 V
Collector-Base Voltage (VCBO)
120 V
Collector-Emitter Breakdown Voltage (BVCEO)
120 V
Collector-Emitter Cutoff Current (ICEV)
1 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
120 V
Continuous Collector Current (IC)
0.5 A
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
20
DC Current Gain (hFE)
20
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Voltage (VEBO)
6 V
Junction Temperature (Tj)
-65 — 175 °C
Output Capacitance (Cob)
6 pF
Power Dissipation (PD)
375 mW
Storage Temperature (Tstg)
-65 — 175 °C

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N4390 Box@2,000 Active 120V,.5A,375mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch EAR99 8541.21.0095 PBFREE

Resources

Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
LSSGP057.PDF Device Datasheet
Material Composition:TO-18 Material Composition
Package Detail Document:TO-18 Package Detail Document
Product Reliability Data:TO-18 Package Reliability Product Reliability Data