2N4398

40V,30A,5W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

Case Type: TO-3

Base-Emitter On Voltage (VBE(ON))
1.7 V
Base-Emitter On Voltage (VBE(ON))
3 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.6 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.85 V
Base-Emitter Saturation Voltage (VBE(SAT))
2.5 V
Collector-Base Cutoff Current (ICBO)
1 mA
Collector-Base Voltage (VCBO)
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICEV)
5 mA
Collector-Emitter Cutoff Current (ICEV)
10 mA
Collector-Emitter Cutoff Current (ICEO)
5 mA
Collector-Emitter Saturation Voltage (VCE(SAT))
750 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1 V
Collector-Emitter Saturation Voltage (VCE(SAT))
2 V
Collector-Emitter Saturation Voltage (VCE(SAT))
4 V
Collector-Emitter Voltage (VCEO)
40 V
Continuous Base Current (IB)
7.5 A
Continuous Collector Current (IC)
30 A
Current Gain-Bandwidth Product (fT)
4 MHz
DC Current Gain (hFE)
40
DC Current Gain (hFE)
15 — 60
DC Current Gain (hFE)
5
Emitter-Base Cutoff Current (IEBO)
5 mA
Emitter-Base Voltage (VEBO)
5 V
Fall Time (tf)
0.6 µs
Junction Temperature (Tj)
-65 — 200 °C
Peak Base Current (IBM)
15 A
Peak Collector Current (ICM)
50 A
Power Dissipation (PD)
5 W
Power Dissipation (PD)
200 W
Rise Time (tr)
0.4 µs
Small Signal Current Gain (hfe)
40
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
1.5 µs
Thermal Resistance Junction-Ambient (ΘJA)
35 °C/W
Thermal Resistance Junction-Case (ΘJC)
0.875 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N4398 Sleeve@20 Discontinued 40V,30A,5W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch EAR99 8541.29.0095 TIN

Resources

2N4398_SERIES.PDF Device Datasheet
Analytical Test Report:Cap and Assembly Analytical Test Report
Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Leads Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
Material Composition:TO-3 Material Composition
Package Detail Document:TO-3 Package Detail Document
Product EOL Notice:Power transistors bare die and Product EOL Notice
Product Reliability Data:TO-3 Package Reliability Product Reliability Data

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