2N4863

120V,2A,4W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

Case Type: TO-39

Base-Emitter On Voltage (VBE(ON))
1.2 V
Collector-Base Breakdown Voltage (BVCBO)
140 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage (VCBO)
140 V
Collector-Emitter Breakdown Voltage (BVCEO)
120 V
Collector-Emitter Cutoff Current (ICEV)
10 µA
Collector-Emitter Cutoff Current (ICEO)
10 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1.5 V
Collector-Emitter Voltage (VCEO)
120 V
Continuous Collector Current (IC)
2 A
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
50 — 150
DC Current Gain (hFE)
15
Emitter-Base Breakdown Voltage (BVEBO)
8 V
Emitter-Base Cutoff Current (IEBO)
10 µA
Emitter-Base Voltage (VEBO)
8 V
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
50 pF
Power Dissipation (PD)
4 W
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case (ΘJC)
25 °C/W
Turn Off Time (toff)
1.7 µs
Turn On Time (ton)
300 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N4863 Box@500 Active 120V,2A,4W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch EAR99 8541.29.0075 PBFREE

Resources

2N4863.PDF Device Datasheet
Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
Material Composition:TO-39 Material Composition
Package Detail Document:TO-39 Package Detail Document
Product Reliability Data:TO-39 Package Reliability Product Reliability Data

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