2N4906

80V,5A,87.5W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

Case Type: TO-3

Base-Emitter On Voltage (VBE(ON))
1.4 V
Collector-Base Cutoff Current (ICBO)
100 µA
Collector-Base Voltage (VCBO)
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Cutoff Current (ICEV)
100 µA
Collector-Emitter Cutoff Current (ICEV)
2 mA
Collector-Emitter Cutoff Current (ICEO)
1 mA
Collector-Emitter Saturation Voltage (VCE(SAT))
1 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1.5 V
Collector-Emitter Voltage (VCEO)
80 V
Continuous Base Current (IB)
1 A
Continuous Collector Current (IC)
5 A
Current Gain-Bandwidth Product (fT)
4 MHz
DC Current Gain (hFE)
25 — 100
DC Current Gain (hFE)
7
Emitter-Base Cutoff Current (IEBO)
1 mA
Emitter-Base Voltage (VEBO)
5 V
Junction Temperature (Tj)
-65 — 200 °C
Power Dissipation (PD)
87.5 W
Small Signal Current Gain (hfe)
40
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case (ΘJC)
2 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N4906 Sleeve@20 Discontinued 80V,5A,87.5W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch EAR99 8541.29.0095 PBFREE

Resources

2N4904-4906.PDF Device Datasheet
Analytical Test Report:Cap and Assembly Analytical Test Report
Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Leads Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
Material Composition:TO-3 Material Composition
Package Detail Document:TO-3 Package Detail Document
Process Change Notice:MJ2955 Process Change Notice
Product EOL Notice:Power transistors bare die and Product EOL Notice
Product Reliability Data:TO-3 Package Reliability Product Reliability Data

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