2N5038

90V,20A,140W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

Case Type: TO-3

Base-Emitter Saturation Voltage (VBE(SAT))
3.3 V
Collector-Base Voltage (VCBO)
150 V
Collector-Emitter Breakdown Voltage (BVCEO)
90 V
Collector-Emitter Cutoff Current (ICEV)
50 mA
Collector-Emitter Saturation Voltage (VCE(SAT))
2.5 V
Collector-Emitter Voltage (VCEV)
150 V
Collector-Emitter Voltage (VCEO)
90 V
Continuous Base Current (IB)
5 A
Continuous Collector Current (IC)
20 A
Current Gain-Bandwidth Product (fT)
60 MHz
DC Current Gain (hFE)
20 — 100
Emitter-Base Cutoff Current (IEBO)
5 mA
Emitter-Base Cutoff Current (IEBO)
50 mA
Emitter-Base Voltage (VEBO)
7 V
Junction Temperature (Tj)
-65 — 200 °C
Peak Collector Current (ICM)
30 A
Power Dissipation (PD)
140 W
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case (ΘJC)
1.25 °C/W
Turn Off Time (toff)
2 µs
Turn On Time (ton)
0.5 µs

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N5038 Sleeve@20 Discontinued 90V,20A,140W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch EAR99 8541.29.0075 PBFREE

Resources

2N5038.PDF Device Datasheet
Analytical Test Report:Cap and Assembly Analytical Test Report
Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Leads Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
Material Composition:TO-3 Material Composition
Package Detail Document:TO-3 Package Detail Document
Product EOL Notice:2N5038 Product EOL Notice
Product Reliability Data:TO-3 Package Reliability Product Reliability Data

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AEM stands ready to assist with your latest design endeavors as your trusted partner.

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  • Application and design sample kits
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