2N5059
250V,150mA,1W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage
Case Type: TO-39
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 30 mA
VCE = 25 V
Test Conditions
IC = 30 mA
IB = 3 mA
Test Conditions
IC = 100 µA
Test Conditions
VCB = 100 V
Test Conditions
VCB = 100 V
TA = 125 °C
Test Conditions
IC = 30 mA
Test Conditions
IC = 30 mA
IB = 3 mA
Test Conditions
VCE = 25 V
IC = 10 mA
f = 20 MHz
Test Conditions
VCE = 25 V
IC = 5 mA
Test Conditions
VCE = 25 V
IC = 30 mA
Test Conditions
VCE = 25 V
IC = 100 mA
Test Conditions
IE = 100 µA
Test Conditions
VEB = 5 V
Test Conditions
VEB = 0.5 V
f = 1 MHz
Test Conditions
VCB = 10 V
f = 1 MHz
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| 2N5059 | Box@500 | Active | 250V,150mA,1W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage | EAR99 | 8541.29.0075 | LEAD or TIN |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| 2N5058_5059.PDF | Device Datasheet |
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |