2N5179

12V,50mA,200mW Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator

Case Type: TO-72

Amplifier Power Gain (Gpe)
15 dB
Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Collector-Base Breakdown Voltage (BVCBO)
20 V
Collector-Base Cutoff Current (ICBO)
20 nA
Collector-Base Cutoff Current (ICBO)
1 µA
Collector-Base Time Constant (rb'Cc)
3 — 14 ps
Collector-Base Voltage (VCBO)
20 V
Collector-Emitter Breakdown Voltage (BVCEO)
12 V
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Voltage (VCEO)
12 V
Continuous Collector Current (IC)
50 mA
Current Gain-Bandwidth Product (fT)
900 — 2000 MHz
DC Current Gain (hFE)
25 — 250
Emitter-Base Breakdown Voltage (BVEBO)
2.5 V
Emitter-Base Voltage (VEBO)
2.5 V
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
4.5 dB
Output Capacitance (Cob)
1 pF
Power Dissipation (PD)
200 mW
Power Dissipation (PD)
300 mW
Power Output (Pout)
20 mW
Small Signal Current Gain (hfe)
25 — 300
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient (ΘJA)
870 °C/W
Thermal Resistance Junction-Case (ΘJC)
580 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N5179 Box@2,000 Active 12V,50mA,200mW Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator EAR99 8541.21.0075 LEAD or TIN

Resources

2N5179.PDF Device Datasheet
Analytical Test Report:Aluminum Wire Analytical Test Report
Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Epoxy Adhesive Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
Material Composition:TO-72 Material Composition
Package Detail Document:TO-72 Package Detail Document
Process Change Notice:HEADER TO-72 Process Change Notice
Process Change Notice:TO-72 Case Process Change Notice
Process Change Notice:TO-72 CASE Process Change Notice
Product Reliability Data:TO-72 Package Reliability Product Reliability Data
Spice Model:Spice Model 2N5179 Spice Model

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