2N5223

20V,100mA,310mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise

Case Type: TO-92

Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Collector-Base Breakdown Voltage (BVCBO)
25 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage (VCBO)
25 V
Collector-Emitter Breakdown Voltage (BVCEO)
20 V
Collector-Emitter Saturation Voltage (VCE(SAT))
700 mV
Collector-Emitter Voltage (VCEO)
20 V
Continuous Collector Current (IC)
100 mA
Current Gain-Bandwidth Product (fT)
150 MHz
DC Current Gain (hFE)
50 — 800
Emitter-Base Breakdown Voltage (BVEBO)
3 V
Emitter-Base Cutoff Current (IEBO)
500 nA
Emitter-Base Voltage (VEBO)
3 V
Junction Temperature (Tj)
-55 — 135 °C
Output Capacitance (Cob)
4 pF
Power Dissipation (PD)
310 mW
Small Signal Current Gain (hfe)
50 — 1600
Storage Temperature (Tstg)
-55 — 135 °C
Thermal Resistance Junction-Ambient (ΘJA)
357 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N5223 Box@2,500 Active 20V,100mA,310mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise EAR99 8541.21.0075 LEAD or TIN

Resources

Analytical Test Report:Copper Bonding Wire Analytical Test Report
Analytical Test Report:Copper Wire Analytical Test Report
Analytical Test Report:Epoxy Adhesive Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Halogen Free Analytical Test Report
Analytical Test Report:Pure Tin Solder, Sn Analytical Test Report
Analytical Test Report:Tin Plating Analytical Test Report
LSSGP073.PDF Device Datasheet
Material Composition:TO-92 Material Composition
Package Detail Document:TO-92 Package Detail Document
Product Reliability Data:TO-92 Package Reliability Product Reliability Data

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