2N5294

70V,4A,36W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

Case Type: TO-220

Base-Emitter On Voltage (VBE(ON))
1.1 V
Collector-Base Voltage (VCBO)
80 V
Collector-Emitter Breakdown Voltage (BVCEV)
80 V
Collector-Emitter Breakdown Voltage (BVCER)
75 V
Collector-Emitter Breakdown Voltage (BVCEO)
70 V
Collector-Emitter Cutoff Current (ICEV)
500 µA
Collector-Emitter Cutoff Current (ICEV)
3 mA
Collector-Emitter Cutoff Current (ICER)
500 µA
Collector-Emitter Cutoff Current (ICER)
2 mA
Collector-Emitter Saturation Voltage (VCE(SAT))
1 V
Collector-Emitter Voltage (VCEV)
80 V
Collector-Emitter Voltage (VCER)
75 V
Collector-Emitter Voltage (VCEO)
70 V
Continuous Base Current (IB)
2 A
Continuous Collector Current (IC)
4 A
Current Gain-Bandwidth Product (fT)
0.8 MHz
DC Current Gain (hFE)
30 — 120
Emitter-Base Cutoff Current (IEBO)
1 mA
Junction Temperature (Tj)
-65 — 150 °C
Power Dissipation (PD)
36 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
70 °C/W
Thermal Resistance Junction-Case (ΘJC)
3.47 °C/W
Turn Off Time (toff)
15 µs
Turn On Time (ton)
5 µs

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N5294 Sleeve@50 Discontinued 70V,4A,36W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch EAR99 8541.29.0095 PBFREE

Resources

2N5294.PDF Device Datasheet
Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
Analytical Test Report:Tin Plating Analytical Test Report
Material Composition:TO-220 Material Composition
Package Detail Document:TO-220 Package Detail Document
Product EOL Notice:Power transistors bare die and Product EOL Notice
Product Reliability Data:TO-220 Package Reliability Product Reliability Data

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