2N5320

75V,2A,10W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

Case Type: TO-39

Base-Emitter On Voltage (VBE(ON))
1.1 V
Collector-Base Cutoff Current (ICBO)
500 nA
Collector-Base Voltage (VCBO)
100 V
Collector-Emitter Breakdown Voltage (BVCEO)
75 V
Collector-Emitter Breakdown Voltage (BVCEV)
100 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEV)
100 V
Collector-Emitter Voltage (VCEO)
75 V
Continuous Base Current (IB)
1 A
Continuous Collector Current (IC)
2 A
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
30 — 200
DC Current Gain (hFE)
10
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage (VEBO)
6 V
Junction Temperature (Tj)
-65 — 200 °C
Power Dissipation (PD)
10 W
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient (ΘJA)
175 °C/W
Thermal Resistance Junction-Case (ΘJC)
17.5 °C/W
Turn Off Time (toff)
800 ns
Turn On Time (ton)
80 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N5320 Box@500 Active 75V,2A,10W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch EAR99 8541.29.0075 LEAD or TIN

Resources

2N5320-5323.PDF Device Datasheet
Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
Material Composition:TO-39 Material Composition
Package Detail Document:TO-39 Package Detail Document
Product Reliability Data:TO-39 Package Reliability Product Reliability Data
Spice Model:Spice Model 2N5320 Spice Model

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