2N5333
80V,2A,1W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch
Case Type: TO-39
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 2 A
VCE = 4 V
Test Conditions
IC = 30 mA
Test Conditions
VCE = 90 V
Test Conditions
VCE = 50 V
TC = 150 °C
Test Conditions
VCE = 40 V
Test Conditions
IC = 1 A
IB = 100 mA
Test Conditions
IC = 2 A
IB = 400 mA
Test Conditions
VCE = 10 V
IC = 1 A
Test Conditions
VCE = 4 V
IC = 1 A
Test Conditions
VCE = 4 V
IC = 2 A
Test Conditions
VEB = 4 V
Test Conditions
VEB = 6 V
Test Conditions
VCE = 10 V
IC = 1 A
f = 1 kHz
Test Conditions
VCC = 10 V
IC = 1 A
IB1 = 100 mA
IB2 = 100 mA
Test Conditions
VCC = 10 V
IC = 1 A
IB1 = 100 mA
VBE = 3.7 V
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| 2N5333 | Box@500 | Active | 80V,2A,1W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch | EAR99 | 8541.29.0075 | PBFREE |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| 2N5333.PDF | Device Datasheet |
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |