2N5337

80V,5A,6W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

Case Type: TO-39

Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.8 V
Collector-Base Cutoff Current (ICBO)
10 µA
Collector-Base Voltage (VCBO)
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Cutoff Current (ICEV)
10 µA
Collector-Emitter Cutoff Current (ICEV)
1 mA
Collector-Emitter Cutoff Current (ICEO)
100 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
700 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1.2 V
Collector-Emitter Voltage (VCEO)
80 V
Continuous Base Current (IB)
1 A
Continuous Collector Current (IC)
5 A
Current Gain-Bandwidth Product (fT)
30 MHz
DC Current Gain (hFE)
60
DC Current Gain (hFE)
60 — 240
DC Current Gain (hFE)
40
Emitter-Base Cutoff Current (IEBO)
100 µA
Emitter-Base Voltage (VEBO)
6 V
Fall Time (tf)
200 ns
Input Capacitance (Cib)
1000 pF
Input Capacitance (Cib)
1000 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
250 pF
Power Dissipation (PD)
6 W
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
2 µs
Thermal Resistance Junction-Case (ΘJC)
29 °C/W
Turn On Time (ton)
200 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N5337 Box@500 Discontinued 80V,5A,6W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch EAR99 8541.29.0075 PBFREE

Resources

2N5336-5339.PDF Device Datasheet
Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
Material Composition:TO-39 Material Composition
Package Detail Document:TO-39 Package Detail Document
Product EOL Notice:2N2483 Product EOL Notice
Product Reliability Data:TO-39 Package Reliability Product Reliability Data

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