2N5428
80V,7A,40W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch
Case Type: TO-66
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 2 A
IB = 200 mA
Test Conditions
IC = 7 A
IB = 700 mA
Test Conditions
VCB = 80 V
Test Conditions
IC = 50 mA
Test Conditions
VCE = 75 V
VBE(OFF) = 1.5 V
Test Conditions
VCE = 75 V
VBE(OFF) = 1.5 V
TC = 150 °C
Test Conditions
VCE = 75 V
Test Conditions
IC = 2 A
IB = 200 mA
Test Conditions
IC = 7 A
IB = 700 mA
Test Conditions
VCE = 10 V
IC = 500 mA
f = 10 MHz
Test Conditions
VCE = 2 V
IC = 500 mA
Test Conditions
VCE = 2 V
IC = 2 A
Test Conditions
VCE = 2 V
IC = 5 A
Test Conditions
VCC = 40 V
IC = 2 A
IB1 = 200 mA
VBE = 3 V
Test Conditions
VEB = 6 V
Test Conditions
VCC = 40 V
IC = 2 A
IB1 = 200 mA
IB2 = 200 mA
Test Conditions
VEB = 2 V
f = 1 MHz
Test Conditions
VCB = 10 V
f = 1 MHz
Test Conditions
VCC = 40 V
IC = 2 A
IB1 = 200 mA
VBE = 3 V
Test Conditions
VCC = 40 V
IC = 2 A
IB1 = 200 mA
IB2 = 200 mA
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| 2N5428 | Sleeve@30 | Discontinued | 80V,7A,40W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch | EAR99 | 8541.29.0075 | PBFREE |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| Analytical Test Report:Leads | Analytical Test Report |
| LSSGP086.PDF | Device Datasheet |
| Material Composition:TO-66 | Material Composition |
| Package Detail Document:TO-66 | Package Detail Document |
| Product EOL Notice:2N5428 | Product EOL Notice |
| Product Reliability Data:TO-66 Package Reliablity | Product Reliability Data |
Product Support
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Design Support
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- Up-screening capabilities
- Special wafer diffusions
- PbSn plating options
- Package details
- Application notes
- Application and design sample kits
- Custom product and package development