2N5679
100V,1A,1W Through-Hole Transistor-Small Signal (<=1A) PNP High Current
Case Type: TO-39
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 250 mA
VCE = 2 V
Test Conditions
VCB = 100 V
Test Conditions
IC = 10 mA
Test Conditions
VCE = 100 V
VBE(OFF) = 1.5 V
Test Conditions
VCE = 100 V
VBE(OFF) = 1.5 V
TC = 150 °C
Test Conditions
VCE = 70 V
Test Conditions
IC = 250 mA
IB = 25 mA
Test Conditions
IC = 500 mA
IB = 50 mA
Test Conditions
IC = 1 A
IB = 200 mA
Test Conditions
VCE = 10 V
IC = 100 mA
f = 10 MHz
Test Conditions
VCE = 2 V
IC = 250 mA
Test Conditions
VCE = 2 V
IC = 1 A
Test Conditions
VEB = 4 V
Test Conditions
VCB = 20 V
f = 1 MHz
Test Conditions
VCE = 1.5 V
IC = 200 mA
f = 1 kHz
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| 2N5679 | Box@500 | Active | 100V,1A,1W Through-Hole Transistor-Small Signal (<=1A) PNP High Current | EAR99 | 8541.29.0075 | LEAD or TIN |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| 2N5679-5682.PDF | Device Datasheet |
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |
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