2N5781

65V,3.5A,1W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

Case Type: TO-39

Base-Emitter On Voltage (VBE(ON))
1.5 V
Collector-Base Voltage (VCBO)
80 V
Collector-Emitter Breakdown Voltage (BVCER)
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
65 V
Collector-Emitter Cutoff Current (ICEV)
10 µA
Collector-Emitter Cutoff Current (ICEV)
1 mA
Collector-Emitter Cutoff Current (ICER)
10 µA
Collector-Emitter Cutoff Current (ICER)
1 mA
Collector-Emitter Cutoff Current (ICEO)
100 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCER)
80 V
Collector-Emitter Voltage (VCEO)
65 V
Continuous Base Current (IB)
1 A
Continuous Collector Current (IC)
3.5 A
Current Gain-Bandwidth Product (fT)
8 — 60 MHz
DC Current Gain (hFE)
20 — 150
DC Current Gain (hFE)
4
Emitter-Base Cutoff Current (IEBO)
10 µA
Emitter-Base Voltage (VEBO)
5 V
Junction Temperature (Tj)
-65 — 200 °C
Power Dissipation (PD)
1 W
Power Dissipation (PD)
10 W
Small Signal Current Gain (hfe)
25
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient (ΘJA)
175 °C/W
Thermal Resistance Junction-Case (ΘJC)
17.5 °C/W
Turn Off Time (toff)
2.5 µs
Turn On Time (ton)
500 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N5781 Box@500 Active 65V,3.5A,1W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch EAR99 8541.29.0075 PBFREE

Resources

2N5781.PDF Device Datasheet
Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
Material Composition:TO-39 Material Composition
Package Detail Document:TO-39 Package Detail Document
Product Reliability Data:TO-39 Package Reliability Product Reliability Data

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