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2N5794

40V,600mA,500mW Through-Hole Transistor-Small Signal (<=1A) Dual NPN General Purpose Amplifier/Switch

Case Type: TO-78

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Technical Specifications

Similar Products with Selected Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
0.6 — 1.2 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.8 V
Collector 1 to Collector 2 Laekage Current (IC1-C2)
1 nA
Collector 2 to Collector 1 Leakage Current (IC2-C1)
1 nA
Collector-Base Breakdown Voltage (BVCBO)
75 V
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage (VCBO)
75 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
900 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current (IC)
600 mA
Current Gain-Bandwidth Product (fT)
250 MHz
DC Current Gain (hFE)
35
DC Current Gain (hFE)
50
DC Current Gain (hFE)
75
DC Current Gain (hFE)
50
DC Current Gain (hFE)
100 — 300
DC Current Gain (hFE)
40
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
10 nA
Emitter-Base Voltage (VEBO)
6 V
Input Capacitance (Cib)
25 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
8 pF
Power Dissipation (PD)
500 mW
Power Dissipation (PD)
600 mW
Power Dissipation (PD)
1.2 W
Power Dissipation (PD)
2 W
Storage Temperature (Tstg)
-65 — 200 °C
Turn Off Time (toff)
300 ns
Turn On Time (ton)
40 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N5794 Box@100 Discontinued 40V,600mA,500mW Through-Hole Transistor-Small Signal (<=1A) Dual NPN General Purpose Amplifier/Switch EAR99 8541.21.0075 PBFREE

Resources

Item Type
2N5793.PDF Device Datasheet
Material Composition:TO-78 Material Composition
Package Detail Document:TO-78 Package Detail Document
Product EOL Notice:TO-78 CASE Product EOL Notice