2N5819

40V,750mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP High Current

Case Type: TO-92

Base-Emitter On Voltage (VBE(ON))
0.6 — 1.1 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Cutoff Current (ICBO)
15 µA
Collector-Base Voltage (VCBO)
50 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Breakdown Voltage (BVCES)
50 V
Collector-Emitter Saturation Voltage (VCE(SAT))
750 mV
Collector-Emitter Voltage (VCES)
50 V
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current (IC)
750 mA
Current Gain-Bandwidth Product (fT)
135 MHz
DC Current Gain (hFE)
150 — 300
DC Current Gain (hFE)
25
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
10 µA
Emitter-Base Voltage (VEBO)
5 V
Input Capacitance (Cib)
55 pF
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
15 pF
Peak Collector Current (ICM)
1 A
Power Dissipation (PD)
625 mW
Power Dissipation (PD)
1.5 W
Storage Temperature (Tstg)
-65 — 150 °C

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N5819 Box@2,000 Active 40V,750mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP High Current EAR99 8541.21.0075 PBFREE

Resources

2N5814-2N5819.PDF Device Datasheet
Analytical Test Report:Copper Bonding Wire Analytical Test Report
Analytical Test Report:Copper Wire Analytical Test Report
Analytical Test Report:Epoxy Adhesive Analytical Test Report
Analytical Test Report:Green Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Halogen Free Analytical Test Report
Analytical Test Report:Pure Tin Solder, Sn Analytical Test Report
Analytical Test Report:Tin Plating Analytical Test Report
Material Composition:TO-92 Material Composition
Package Detail Document:TO-92 Package Detail Document
Product Reliability Data:TO-92 Package Reliability Product Reliability Data

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