2N5885
60V,25A,200W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch
Case Type: TO-3
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 10 A
VCE = 4 V
Test Conditions
IC = 25 A
IB = 6.25 A
Test Conditions
VCB = 60 V
Test Conditions
IC = 200 mA
Test Conditions
VCE = 30 V
Test Conditions
VCE = 60 V
VBE(OFF) = 1.5 V
Test Conditions
VCE = 60 V
VBE(OFF) = 1.5 V
TC = 150 °C
Test Conditions
IC = 15 A
IB = 1.5 A
Test Conditions
IC = 25 A
IB = 6.25 A
Test Conditions
VCE = 10 V
IC = 1 A
f = 1 MHz
Test Conditions
VCE = 4 V
IC = 3 A
Test Conditions
VCE = 4 V
IC = 10 A
Test Conditions
VCE = 4 V
IC = 25 A
Test Conditions
VEB = 5 V
Test Conditions
VCC = 30 V
IC = 10 A
IB1 = 1 A
IB2 = 1 A
Test Conditions
VCB = 10 V
f = 1 MHz
Test Conditions
VCC = 30 V
IC = 10 A
IB1 = 1 A
Test Conditions
VCE = 4 V
IC = 3 A
f = 1 kHz
Test Conditions
VCC = 30 V
IC = 10 A
IB1 = 1 A
IB2 = 1 A
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| 2N5885 | Sleeve@20 | Discontinued | 60V,25A,200W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch | EAR99 | 8541.29.0095 | TIN |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| 2N5883-5886.PDF | Device Datasheet |
| Analytical Test Report:Cap and Assembly | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leads | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Material Composition:TO-3 | Material Composition |
| Package Detail Document:TO-3 | Package Detail Document |
| Process Change Notice:2N5301 | Process Change Notice |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-3 Package Reliability | Product Reliability Data |
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