2N6132

40V,7A,50W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

Case Type: TO-220

Base-Emitter On Voltage (VBE(ON))
2 V
Collector-Base Cutoff Current (ICBO)
100 µA
Collector-Base Voltage (VCBO)
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICEV)
200 µA
Collector-Emitter Cutoff Current (ICEV)
2 mA
Collector-Emitter Cutoff Current (ICEO)
2 mA
Collector-Emitter Saturation Voltage (VCE(SAT))
1.8 V
Collector-Emitter Voltage (VCEO)
40 V
Continuous Base Current (IB)
3 A
Continuous Collector Current (IC)
7 A
Current Gain-Bandwidth Product (fT)
2.5 MHz
DC Current Gain (hFE)
20 — 100
DC Current Gain (hFE)
7
Emitter-Base Cutoff Current (IEBO)
1 mA
Emitter-Base Voltage (VEBO)
5 V
Junction Temperature (Tj)
-65 — 150 °C
Power Dissipation (PD)
50 W
Power Dissipation (PD)
20 W
Small Signal Current Gain (hfe)
25
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Case (ΘJC)
2.5 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N6132 Sleeve@50 Discontinued 40V,7A,50W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch EAR99 8541.29.0095 PBFREE

Resources

Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
Analytical Test Report:Tin Plating Analytical Test Report
LSSGP092.PDF Device Datasheet
Material Composition:TO-220 Material Composition
Package Detail Document:TO-220 Package Detail Document
Product EOL Notice:Power transistors bare die and Product EOL Notice
Product Reliability Data:TO-220 Package Reliability Product Reliability Data

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