2N6307
300V,8A,125W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage
Case Type: TO-3
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 3 A
VCE = 5 V
Test Conditions
IC = 8 A
IB = 2 A
Test Conditions
IC = 100 mA
Test Conditions
VCE = 600 V
VBE(OFF) = 1.5 V
Test Conditions
VCE = 300 V
Test Conditions
IC = 3 A
IB = 600 mA
Test Conditions
IC = 8 A
IB = 2 A
Test Conditions
VCE = 10 V
IC = 300 mA
f = 1 MHz
Test Conditions
VCE = 5 V
IC = 3 A
Test Conditions
VCE = 5 V
IC = 8 A
Test Conditions
VEB = 8 V
Test Conditions
VCC = 125 V
IC = 3 A
IB1 = 600 mA
IB2 = 600 mA
Test Conditions
VCB = 10 V
f = 1 MHz
Test Conditions
VCC = 125 V
IC = 3 A
IB1 = 600 mA
Test Conditions
VCC = 125 V
IC = 3 A
IB1 = 600 mA
IB2 = 600 mA
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| 2N6307 | Sleeve@20 | Discontinued | 300V,8A,125W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage | EAR99 | 8541.29.0095 | PBFREE |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| 2N6306-6308.PDF | Device Datasheet |
| Analytical Test Report:Cap and Assembly | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leads | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Material Composition:TO-3 | Material Composition |
| Package Detail Document:TO-3 | Package Detail Document |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-3 Package Reliability | Product Reliability Data |
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Design Support
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