2N6316

80V,7A,90W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

Case Type: TO-66

Base-Emitter On Voltage (VBE(ON))
1.5 V
Base-Emitter Saturation Voltage (VBE(SAT))
2.5 V
Collector-Base Cutoff Current (ICBO)
250 µA
Collector-Base Voltage (VCBO)
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Cutoff Current (ICEV)
250 µA
Collector-Emitter Cutoff Current (ICEV)
2 mA
Collector-Emitter Cutoff Current (ICEO)
500 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1 V
Collector-Emitter Saturation Voltage (VCE(SAT))
2 V
Collector-Emitter Voltage (VCEO)
80 V
Continuous Base Current (IB)
2 A
Continuous Collector Current (IC)
7 A
Current Gain-Bandwidth Product (fT)
4 MHz
DC Current Gain (hFE)
35
DC Current Gain (hFE)
20 — 100
DC Current Gain (hFE)
4
Emitter-Base Cutoff Current (IEBO)
1 mA
Emitter-Base Voltage (VEBO)
5 V
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
200 pF
Peak Collector Current (ICM)
15 A
Power Dissipation (PD)
90 W
Rise Time (tr)
0.7 µs
Small Signal Current Gain (hfe)
20
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case (ΘJC)
1.95 °C/W
Turn Off Time (toff)
1.8 µs

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N6316 Sleeve@30 Discontinued 80V,7A,90W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch EAR99 8541.29.0095 PBFREE

Resources

2N6315-6318.PDF Device Datasheet
Analytical Test Report:Leads Analytical Test Report
Material Composition:TO-66 Material Composition
Package Detail Document:TO-66 Package Detail Document
Product EOL Notice:CZT3055 Product EOL Notice
Product Reliability Data:TO-66 Package Reliablity Product Reliability Data

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