2N6430
200V,500mA,500mW Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage
Case Type: TO-18
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 20 mA
IB = 2 mA
Test Conditions
IC = 100 µA
Test Conditions
VCB = 160 V
Test Conditions
IC = 1 mA
Test Conditions
IC = 20 mA
IB = 2 mA
Test Conditions
VCE = 20 V
IC = 10 mA
f = 100 MHz
Test Conditions
VCE = 10 V
IC = 1 mA
Test Conditions
VCE = 10 V
IC = 10 mA
Test Conditions
VCE = 10 V
IC = 30 mA
Test Conditions
IE = 100 µA
Test Conditions
VEB = 4 V
Test Conditions
VCB = 20 V
f = 1 MHz
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| 2N6430 | Box@2,000 | Active | 200V,500mA,500mW Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage | EAR99 | 8541.21.0075 | LEAD or TIN |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| 2N6430-6433.PDF | Device Datasheet |
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| Material Composition:TO-18 | Material Composition |
| Package Detail Document:TO-18 | Package Detail Document |
| Product Reliability Data:TO-18 Package Reliability | Product Reliability Data |
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