2N6467
100V,4A,40W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch
Case Type: TO-66
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 1.5 A
VCE = 4 V
Test Conditions
IC = 4 A
VCE = 4 V
Test Conditions
IC = 100 mA
VBE(OFF) = 1.5 V
Test Conditions
IC = 100 mA
RBE = 100 Ω
Test Conditions
IC = 100 mA
Test Conditions
VCE = 100 V
VBE(OFF) = 1.5 V
Test Conditions
VCE = 100 V
VBE(OFF) = 1.5 V
TC = 150 °C
Test Conditions
VCE = 95 V
RBE = 100 Ω
Test Conditions
VCE = 50 V
Test Conditions
IC = 1.5 A
IB = 150 mA
Test Conditions
IC = 4 A
IB = 800 mA
Test Conditions
VCE = 4 V
IC = 1 A
Test Conditions
VCE = 4 V
IC = 1.5 A
Test Conditions
VCE = 4 V
IC = 4 A
Test Conditions
VEB = 5 V
Test Conditions
VCE = 4 V
IC = 500 mA
f = 1 kHz
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| 2N6467 | Sleeve@30 | Discontinued | 100V,4A,40W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch | EAR99 | 8541.29.0095 | PBFREE |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| Analytical Test Report:Leads | Analytical Test Report |
| LSSGP086.PDF | Device Datasheet |
| Material Composition:TO-66 | Material Composition |
| Package Detail Document:TO-66 | Package Detail Document |
| Product EOL Notice:BCY79-VIII | Product EOL Notice |
| Product Reliability Data:TO-66 Package Reliablity | Product Reliability Data |
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Design Support
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