2N6474
120V,4A,40W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch
Case Type: TO-220
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 1.5 A
VCE = 4 V
Test Conditions
IC = 4 A
VCE = 2.5 V
Test Conditions
IC = 100 mA
Test Conditions
IC = 100 mA
RBE = 100 Ω
Test Conditions
VCE = 120 V
VBE(OFF) = 1.5 V
Test Conditions
VCE = 120 V
VBE(OFF) = 1.5 V
TC = 100 °C
Test Conditions
VCE = 130 V
RBE = 100 Ω
Test Conditions
VCE = 130 V
RBE = 100 Ω
TC = 100 °C
Test Conditions
VCE = 60 V
Test Conditions
IC = 1.5 A
IB = 150 mA
Test Conditions
IC = 4 A
IB = 2 A
Test Conditions
VCE = 4 V
IC = 500 mA
Test Conditions
VCE = 4 V
IC = 1.5 A
Test Conditions
VCE = 2.5 V
IC = 4 A
Test Conditions
VEB = 5 V
Test Conditions
VCB = 10 V
f = 1 MHz
Test Conditions
VCE = 5 V
IC = 500 mA
f = 50 kHz
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| 2N6474 | Sleeve@50 | Discontinued | 120V,4A,40W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch | EAR99 | 8541.29.0095 | PBFREE |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| 2N6473-6476.PDF | Device Datasheet |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| Material Composition:TO-220 | Material Composition |
| Package Detail Document:TO-220 | Package Detail Document |
| Product EOL Notice:2N6478 | Product EOL Notice |
| Product Reliability Data:TO-220 Package Reliability | Product Reliability Data |
Product Support
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Design Support
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- Environmental regulation compliance
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- Up-screening capabilities
- Special wafer diffusions
- PbSn plating options
- Package details
- Application notes
- Application and design sample kits
- Custom product and package development