2N6491
80V,15A,1.8W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch
Case Type: TO-220
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 5 A
VCE = 4 V
Test Conditions
IC = 15 A
VCE = 4 V
Test Conditions
IC = 200 mA
VBE(OFF) = 1.5 V
Test Conditions
IC = 200 mA
Test Conditions
VCE = 85 V
VBE(OFF) = 1.5 V
Test Conditions
VCE = 40 V
Test Conditions
IC = 5 A
IB = 500 mA
Test Conditions
IC = 15 A
IB = 5 A
Test Conditions
VCE = 4 V
IC = 1 A
f = 1 MHz
Test Conditions
VCE = 4 V
IC = 5 A
Test Conditions
VCE = 4 V
IC = 15 A
Test Conditions
VEB = 5 V
Test Conditions
VCE = 4 V
IC = 1 A
f = 1 kHz
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| 2N6491 | Sleeve@50 | Active | 80V,15A,1.8W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch | EAR99 | 8541.29.0095 | TIN |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| 2N6486-6491.PDF | Device Datasheet |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Material Composition:TO-220 | Material Composition |
| Package Detail Document:TO-220 | Package Detail Document |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-220 Package Reliability | Product Reliability Data |