2N6545

400V,8A,71.5W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage

Case Type: TO-3

Base-Emitter Saturation Voltage (VBE(SAT))
1.6 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.6 V
Collector-Emitter Breakdown Voltage (BVCEO)
400 V
Collector-Emitter Cutoff Current (ICEV)
0.5 mA
Collector-Emitter Cutoff Current (ICEV)
2.5 mA
Collector-Emitter Cutoff Current (ICER)
3 mA
Collector-Emitter Saturation Voltage (VCE(SAT))
1.5 V
Collector-Emitter Saturation Voltage (VCE(SAT))
2.5 V
Collector-Emitter Saturation Voltage (VCE(SAT))
5 V
Collector-Emitter Voltage (VCEV)
850 V
Collector-Emitter Voltage (VCEO)
400 V
Collector-Emitter Voltage (BVCEX)
450 V
Collector-Emitter Voltage (BVCEX)
300 V
Collector-Emittter Voltage (VCEX)
450 V
Continuous Base Current (IB)
8 A
Continuous Collector Current (IC)
8 A
Continuous Emitter Current (IE)
16 A
Current Gain-Bandwidth Product (fT)
6 — 28 MHz
DC Current Gain (hFE)
12 — 60
DC Current Gain (hFE)
7 — 35
Delay Time (td)
50 ns
Emitter-Base Cutoff Current (IEBO)
1 mA
Emitter-Base Voltage (VEBO)
9 V
Fall Time (tf)
1 µs
Fall Time Clamped Inductive Load (tf)
0.9 µs
Fall Time Clamped Inductive Load (tf)
0.18 µs
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
75 — 300 pF
Peak Base Current (IBM)
16 A
Peak Collector Current (ICM)
16 A
Peak Emitter Current (IEM)
32 A
Power Dissipation (PD)
71.5 W
Power Dissipation (PD)
125 W
Rise Time (tr)
1 µs
Second Breakdown Collector Current (Is/b)
200 mA
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
4 µs
Storage Time Clamped Inductive Load (ts)
4 µs
Storage Time Clamped Inductive Load (ts)
1.2 µs
Thermal Resistance Junction-Case (ΘJC)
1.4 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N6545 Sleeve@20 Discontinued 400V,8A,71.5W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage EAR99 8541.29.0095 PBFREE

Resources

2N6544.PDF Device Datasheet
Analytical Test Report:Cap and Assembly Analytical Test Report
Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Leads Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
Material Composition:TO-3 Material Composition
Package Detail Document:TO-3 Package Detail Document
Process Change Notice:2N6545 Process Change Notice
Product EOL Notice:Power transistors bare die and Product EOL Notice
Product Reliability Data:TO-3 Package Reliability Product Reliability Data

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