2N657A

100V,250mA,800mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch

Case Type: TO-39

Collector-Base Breakdown Voltage (BV_CBO)

100 V

Collector-Base Cutoff Current (I_CBO)

10 µA

Collector-Base Voltage (V_CBO)

100 V

Collector-Emitter Breakdown Voltage (BV_CEO)

100 V

Collector-Emitter Saturation Voltage (V_CE(SAT))

2 V

Collector-Emitter Voltage (V_CEO)

100 V

Continuous Collector Current (I_C)

250 mA

Current Gain-Bandwidth Product (f_T)

70 MHz

DC Current Gain (h_FE)

30 — 90

Emitter-Base Breakdown Voltage (BV_EBO)

6 V

Emitter-Base Voltage (V_EBO)

6 V

Input Capacitance (C_ib)

60 pF

Input Impedance Common Emitter (h_ie)

500 Ω

Junction Temperature (T_j)

-65 — 200 °C

Output Capacitance (C_ob)

13 pF

Power Dissipation (P_D)

800 mW

Power Dissipation (P_D)

4 W

Storage Temperature (T_stg)

-65 — 200 °C

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
2N657A	Box@500		Active	100V,250mA,800mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch	EAR99	8541.21.0095	LEAD or TIN


Item	Type
No matching documents found.
Analytical Test Report:Bond Wire	Analytical Test Report
Analytical Test Report:Cap	Analytical Test Report
Analytical Test Report:Header	Analytical Test Report
Analytical Test Report:Header Assembly	Analytical Test Report
LSSGP059.PDF	Device Datasheet
Material Composition:TO-39	Material Composition
Package Detail Document:TO-39	Package Detail Document
Product Reliability Data:TO-39 Package Reliability	Product Reliability Data