2N6674

300V,15A,175W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage

Case Type: TO-3

Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Collector-Emitter Breakdown Voltage (BVCEO)
300 V
Collector-Emitter Cutoff Current (ICEV)
100 µA
Collector-Emitter Cutoff Current (ICEV)
1 mA
Collector-Emitter Saturation Voltage (VCE(SAT))
1 V
Collector-Emitter Saturation Voltage (VCE(SAT))
2 V
Collector-Emitter Saturation Voltage (VCE(SAT))
5 V
Collector-Emitter Voltage (VCEV)
450 V
Collector-Emitter Voltage (VCEO)
300 V
Continuous Base Current (IB)
5 A
Continuous Collector Current (IC)
15 A
Current Gain-Bandwidth Product (fT)
15 — 50 MHz
DC Current Gain (hFE)
8 — 20
Delay Time (td)
100 ns
Emitter-Base Cutoff Current (IEBO)
2 mA
Emitter-Base Voltage (VEBO)
7 V
Fall Time (tf)
500 ns
Fall Time (tf)
1 µs
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
150 — 500 pF
Peak Collector Current (ICM)
20 A
Power Dissipation (PD)
175 W
Rise Time (tr)
600 ns
Rise Time (tr)
1 µs
Second Breakdown Collector Current (Is/b)
5.9 A
Second Breakdown Collector Current (Is/b)
250 mA
Small Signal Current Gain (hfe)
3 — 10
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
4 µs
Storage Time (ts)
2.5 µs
Thermal Resistance Junction-Case (ΘJC)
1 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N6674 Sleeve@20 Discontinued 300V,15A,175W Through-Hole Transistor-Bipolar Power (>1A) NPN High Voltage EAR99 8541.29.0075 PBFREE

Resources

2N6674.PDF Device Datasheet
Analytical Test Report:Cap and Assembly Analytical Test Report
Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Leads Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
Material Composition:TO-3 Material Composition
Package Detail Document:TO-3 Package Detail Document
Product EOL Notice:Power transistors bare die and Product EOL Notice
Product Reliability Data:TO-3 Package Reliability Product Reliability Data

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