2N914

15V,150mA,360W Through-Hole Transistor-Small Signal (<=1A) NPN Saturated Switch

Case Type: TO-18

Base-Emitter Saturation Voltage (VBE(SAT))
0.7 — 0.8 V
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Cutoff Current (ICBO)
25 nA
Collector-Base Cutoff Current (ICBO)
15 µA
Collector-Base Voltage (VCBO)
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
15 V
Collector-Emitter Breakdown Voltage (BVCER)
20 V
Collector-Emitter Cutoff Current (ICEV)
10 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
0.7 V
Collector-Emitter Voltage (VCEO)
15 V
Collector-Emitter Voltage (VCER)
20 V
Continuous Collector Current (IC)
150 mA
Current Gain-Bandwidth Product (fT)
300 MHz
DC Current Gain (hFE)
30 — 120
DC Current Gain (hFE)
12
DC Current Gain (hFE)
10
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
0.1 µA
Emitter-Base Voltage (VEBO)
5 V
Input Capacitance (Cib)
9 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
6 pF
Power Dissipation (PD)
360 W
Power Dissipation (PD)
1.2 W
Power Dissipation (PD)
0.68 W
Storage Temperature (Tstg)
-65 — 200 °C
Turn Off Time (toff)
40 ns
Turn On Time (ton)
40 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N914 Box@2,000 Active 15V,150mA,360W Through-Hole Transistor-Small Signal (<=1A) NPN Saturated Switch EAR99 8541.21.0075 PBFREE

Resources

Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
LSSGP054.PDF Device Datasheet
Material Composition:TO-18 Material Composition
Package Detail Document:TO-18 Package Detail Document
Process Change Notice:CP207 replaced by CP396V Process Change Notice
Product Reliability Data:TO-18 Package Reliability Product Reliability Data

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