2N915

50V Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator

Case Type: TO-18

Base-Emitter Saturation Voltage (V_BE(SAT))

900 mV

Collector-Base Breakdown Voltage (BV_CBO)

70 V

Collector-Base Cutoff Current (I_CBO)

10 nA

Collector-Base Voltage (V_CBO)

70 V

Collector-Emitter Breakdown Voltage (BV_CEO)

50 V

Collector-Emitter Saturation Voltage (V_CE(SAT))

1 V

Collector-Emitter Voltage (V_CEO)

50 V

DC Current Gain (h_FE)

50 — 200

Emitter-Base Breakdown Voltage (BV_EBO)

5 V

Emitter-Base Voltage (V_EBO)

5 V

Junction Temperature (T_j)

-65 — 150 °C

Storage Temperature (T_stg)

-65 — 150 °C

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
2N915	Box@2,000		Discontinued	50V Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator	EAR99	8541.21.0095	TIN


Item	Type
No matching documents found.
Analytical Test Report:Bond Wire	Analytical Test Report
Analytical Test Report:Cap	Analytical Test Report
Analytical Test Report:Header	Analytical Test Report
Analytical Test Report:Header Assembly	Analytical Test Report
LSSGP054.PDF	Device Datasheet
Material Composition:TO-18	Material Composition
Package Detail Document:TO-18	Package Detail Document
Product EOL Notice:2N915	Product EOL Notice
Product Reliability Data:TO-18 Package Reliability	Product Reliability Data