2N917
15V,25mA,200mW Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator
Case Type: TO-72
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
f = 200 MHz
VCE = 10 V
IC = 5 mA
Test Conditions
IC = 3 mA
IB = 150 µA
Test Conditions
IC = 1 µA
Test Conditions
VCB = 15 V
Test Conditions
VCB = 15 V
TA = 150 °C
Test Conditions
VCB = 10 V
f = 40 MHz
IC = 4 mA
Test Conditions
IC = 3 mA
Test Conditions
IC = 3 mA
IB = 150 µA
Test Conditions
VCE = 10 V
IC = 4 mA
f = 100 MHz
Test Conditions
VCE = 1 V
IC = 3 mA
Test Conditions
IE = 10 µA
Test Conditions
VEB = 0.5 V
f = 1 MHz
Test Conditions
VCE = 6 V
IC = 1 mA
f = 60 MHz
RS = 400 Ω
Test Conditions
VCB = 10 V
f = 1 MHz
Test Conditions
f = 500 MHz
IC = 8 mA
VCC = 15 V
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| 2N917 | Box@2,000 | Active | 15V,25mA,200mW Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator | EAR99 | 8541.21.0075 | PBFREE |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| Analytical Test Report:Aluminum Wire | Analytical Test Report |
| Analytical Test Report:Bond Wire | Analytical Test Report |
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| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| LSSGP069.PDF | Device Datasheet |
| Material Composition:TO-72 | Material Composition |
| Package Detail Document:TO-72 | Package Detail Document |
| Process Change Notice:HEADER TO-72 | Process Change Notice |
| Process Change Notice:TO-72 Case | Process Change Notice |
| Process Change Notice:TO-72 CASE | Process Change Notice |
| Product Reliability Data:TO-72 Package Reliability | Product Reliability Data |
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