2N918

15V,50mA,200mW Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator

Case Type: TO-72

Amplifier Power Gain (Gpe)
15 dB
Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Collector Efficiency (η)
25 %
Collector-Base Breakdown Voltage (BVCBO)
30 V
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Cutoff Current (ICBO)
1 µA
Collector-Base Voltage (VCBO)
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
15 V
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Voltage (VCEO)
15 V
Continuous Collector Current (IC)
50 mA
Current Gain-Bandwidth Product (fT)
600 MHz
DC Current Gain (hFE)
20
Emitter-Base Breakdown Voltage (BVEBO)
3 V
Emitter-Base Voltage (VEBO)
3 V
Input Capacitance (Cib)
2 pF
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
6 dB
Output Capacitance (Cob)
1.7 pF
Output Capacitance (Cob)
3 pF
Power Dissipation (PD)
200 mW
Power Dissipation (PD)
300 mW
Power Output (Pout)
30 mW
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient (ΘJA)
875 °C/W
Thermal Resistance Junction-Case (ΘJC)
583 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
2N918 Box@2,000 Active 15V,50mA,200mW Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator EAR99 8541.21.0075 TIN

Resources

2N918.PDF Device Datasheet
Analytical Test Report:Aluminum Wire Analytical Test Report
Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Epoxy Adhesive Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
Material Composition:TO-72 Material Composition
Package Detail Document:TO-72 Package Detail Document
Process Change Notice:HEADER TO-72 Process Change Notice
Process Change Notice:TO-72 Case Process Change Notice
Process Change Notice:TO-72 CASE Process Change Notice
Product Reliability Data:TO-72 Package Reliability Product Reliability Data
Spice Model:Spice Model 2N918 Spice Model

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