40347

40V,1.5A,1W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

Case Type: TO-39

Base-Emitter On Voltage (V_BE(ON))

1.5 V

Collector-Base Voltage (V_CBO)

60 V

Collector-Emitter Breakdown Voltage (BV_CEV)

60 V

Collector-Emitter Breakdown Voltage (BV_CEO)

40 V

Collector-Emitter Cutoff Current (I_CER)

1 µA

Collector-Emitter Cutoff Current (I_CER)

1 mA

Collector-Emitter Saturation Voltage (V_CE(SAT))

1 V

Collector-Emitter Voltage (V_CEV)

60 V

Collector-Emitter Voltage (V_CEO)

40 V

Continuous Base Current (I_B)

500 mA

Continuous Collector Current (I_C)

1.5 A

DC Current Gain (h_FE)

25 — 100

Emitter-Base Cutoff Current (I_EBO)

10 µA

Emitter-Base Voltage (V_EBO)

7 V

Junction Temperature (T_j)

-65 — 200 °C

Peak Collector Current (I_CM)

3 A

Power Dissipation (P_D)

1 W

Power Dissipation (P_D)

8.75 W

Storage Temperature (T_stg)

-65 — 200 °C

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
40347	Box@500		Active	40V,1.5A,1W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch	EAR99	8541.29.0095	LEAD or TIN


Item	Type
No matching documents found.
Analytical Test Report:Bond Wire	Analytical Test Report
Analytical Test Report:Cap	Analytical Test Report
Analytical Test Report:Header	Analytical Test Report
Analytical Test Report:Header Assembly	Analytical Test Report
LSSGP067.PDF	Device Datasheet
Material Composition:TO-39	Material Composition
Package Detail Document:TO-39	Package Detail Document
Product Reliability Data:TO-39 Package Reliability	Product Reliability Data