BC178B

25V,100mA,300mW Through-Hole Transistor-Small Signal (<=1A) PNP Low Noise

Case Type: TO-18

Base-Emitter On Voltage (VBE(ON))
600 — 750 mV
Collector-Base Breakdown Voltage (BVCBO)
30 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Cutoff Current (ICBO)
10 µA
Collector-Base Voltage (VCBO)
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
25 V
Collector-Emitter Breakdown Voltage (BVCEV)
30 V
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
25 V
Collector-Emitter Voltage (VCEV)
30 V
Continuous Collector Current (IC)
100 mA
Current Gain-Bandwidth Product (fT)
150 MHz
DC Current Gain (hFE)
200 — 415
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage (VEBO)
5 V
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
4 pF
Peak Collector Current (ICM)
200 mA
Power Dissipation (PD)
300 mW
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case (ΘJC)
175 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
BC178B Box@2,000 Active 25V,100mA,300mW Through-Hole Transistor-Small Signal (<=1A) PNP Low Noise EAR99 8541.21.0075 PBFREE

Resources

Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
BC178B.PDF Device Datasheet
Material Composition:TO-18 Material Composition
Package Detail Document:TO-18 Package Detail Document
Product Reliability Data:TO-18 Package Reliability Product Reliability Data