BD441

80V,4A,36W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

Case Type: TO-126

Base-Emitter On Voltage (VBE(ON))
1.5 V
Collector-Base Cutoff Current (ICBO)
100 µA
Collector-Base Voltage (VCBO)
80 V
Collector-Emitter Breakdown Voltage (BVCEO)
80 V
Collector-Emitter Cutoff Current (ICES)
100 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
0.8 V
Collector-Emitter Voltage (VCES)
80 V
Collector-Emitter Voltage (VCEO)
80 V
Continuous Base Current (IB)
1 A
Continuous Collector Current (IC)
4 A
Current Gain-Bandwidth Product (fT)
3 MHz
DC Current Gain (hFE)
15
DC Current Gain (hFE)
40
DC Current Gain (hFE)
15
Emitter-Base Cutoff Current (IEBO)
1 mA
Emitter-Base Voltage (VEBO)
5 V
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current (ICM)
7 A
Power Dissipation (PD)
36 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient (ΘJA)
100 °C/W
Thermal Resistance Junction-Case (ΘJC)
3.5 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
BD441 Sleeve@50 Discontinued 80V,4A,36W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch EAR99 8541.29.0095 PBFREE

Resources

Analytical Test Report:Copper Bonding Wire Analytical Test Report
Analytical Test Report:Die Attach Analytical Test Report
Analytical Test Report:Epoxy Molding Compound Analytical Test Report
Analytical Test Report:Leadframe Analytical Test Report
Analytical Test Report:Sn Plating Analytical Test Report
Analytical Test Report:Tin Plating Analytical Test Report
BD439-442.PDF Device Datasheet
Material Composition:TO-126 Material Composition
Package Detail Document:TO-126 Package Detail Document
Process Change Notice:2N5192 chip size change Process Change Notice
Product EOL Notice:Power transistors bare die and Product EOL Notice
Product Reliability Data:TO-126 Package Reliability Product Reliability Data

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