BF178

50mA,1.7W Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch

Case Type: TO-39

Base-Emitter On Voltage (V_BE(ON))

1.2 V

Collector-Base Breakdown Voltage (BV_CBO)

185 V

Collector-Emitter Breakdown Voltage (BV_CER)

185 V

Collector-Emitter Breakdown Voltage (BV_CEO)

115 V

Collector-Emitter Cutoff Current (I_CES)

1 mA

Collector-Emitter Voltage (V_CER)

185 V

Continuous Base Current (I_B)

10 mA

Continuous Collector Current (I_C)

50 mA

Current Gain-Bandwidth Product (f_T)

120 MHz

DC Current Gain (h_FE)

Emitter-Base Breakdown Voltage (BV_EBO)

5 V

Emitter-Base Voltage (V_EBO)

5 V

Junction Temperature (T_j)

-65 — 200 °C

Power Dissipation (P_D)

1.7 W

Storage Temperature (T_stg)

-65 — 200 °C

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
BF178	Box@500		Active	50mA,1.7W Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch	EAR99	8541.29.0075	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Bond Wire	Analytical Test Report
Analytical Test Report:Cap	Analytical Test Report
Analytical Test Report:Header	Analytical Test Report
Analytical Test Report:Header Assembly	Analytical Test Report
BF178.PDF	Device Datasheet
Material Composition:TO-39	Material Composition
Package Detail Document:TO-39	Package Detail Document
Product Reliability Data:TO-39 Package Reliability	Product Reliability Data