BF258

250V,100mA,5W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage

Case Type: TO-39

Collector-Base Breakdown Voltage (BV_CBO)

250 V

Collector-Base Cutoff Current (I_CBO)

50 nA

Collector-Base Voltage (V_CBO)

250 V

Collector-Emitter Breakdown Voltage (BV_CEO)

250 V

Collector-Emitter Saturation Voltage (V_CE(SAT))

1 V

Collector-Emitter Voltage (V_CEO)

250 V

Continuous Collector Current (I_C)

100 mA

Current Gain-Bandwidth Product (f_T)

90 MHz

DC Current Gain (h_FE)

Emitter-Base Breakdown Voltage (BV_EBO)

5 V

Emitter-Base Voltage (V_EBO)

5 V

Junction Temperature (T_j)

-65 — 200 °C

Peak Collector Current (I_CM)

200 mA

Power Dissipation (P_D)

5 W

Storage Temperature (T_stg)

-65 — 200 °C

Thermal Resistance Junction-Ambient (Θ_JA)

175 °C/W

Thermal Resistance Junction-Case (Θ_JC)

30 °C/W

Part	Package	Buy	Status	Description	ECCN Code	HTS Code	Termination
BF258	Box@500		Active	250V,100mA,5W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage	EAR99	8541.29.0075	PBFREE


Item	Type
No matching documents found.
Analytical Test Report:Bond Wire	Analytical Test Report
Analytical Test Report:Cap	Analytical Test Report
Analytical Test Report:Header	Analytical Test Report
Analytical Test Report:Header Assembly	Analytical Test Report
LSSGP065.PDF	Device Datasheet
Material Composition:TO-39	Material Composition
Package Detail Document:TO-39	Package Detail Document
Product Reliability Data:TO-39 Package Reliability	Product Reliability Data