BFW16A

25V,150mA,1.5W Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator

Case Type: TO-39

Amplifier Power Gain (Gpe)
6.5 dB
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Cutoff Current (ICBO)
20 µA
Collector-Base Voltage (VCBO)
40 V
Collector-Emitter Breakdown Voltage (BVCER)
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
25 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCER)
40 V
Collector-Emitter Voltage (VCEO)
25 V
Continuous Collector Current (IC)
150 mA
Current Gain-Bandwidth Product (fT)
1200 MHz
DC Current Gain (hFE)
25
DC Current Gain (hFE)
25
Emitter-Base Breakdown Voltage (BVEBO)
2 V
Emitter-Base Voltage (VEBO)
2 V
Junction Temperature (Tj)
-65 — 200 °C
Noise Figure (NF)
6 dB
Output Capacitance (Cob)
4 pF
Peak Collector Current (ICM)
300 mA
Power Dissipation (PD)
1.5 W
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Ambient (ΘJA)
250 °C/W
Thermal Resistance Junction-Case (ΘJC)
50 °C/W

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
BFW16A Box@500 Discontinued 25V,150mA,1.5W Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator EAR99 8541.29.0075 PBFREE

Resources

Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
LSSGP065.PDF Device Datasheet
Material Composition:TO-39 Material Composition
Package Detail Document:TO-39 Package Detail Document
Product EOL Notice:RF TRANSISTOR DIE Product EOL Notice
Product Reliability Data:TO-39 Package Reliability Product Reliability Data

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