BFX34

60V,5A,870mW Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

Case Type: TO-39

Base-Emitter Saturation Voltage (VBE(SAT))
1.6 V
Collector-Base Breakdown Voltage (BVCBO)
120 V
Collector-Base Voltage (VCBO)
120 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Cutoff Current (ICES)
10 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1 V
Collector-Emitter Voltage (VCEO)
60 V
Continuous Collector Current (IC)
5 A
Current Gain-Bandwidth Product (fT)
70 MHz
DC Current Gain (hFE)
40 — 150
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
10 µA
Emitter-Base Voltage (VEBO)
6 V
Input Capacitance (Cib)
500 pF
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
100 pF
Power Dissipation (PD)
870 mW
Power Dissipation (PD)
5 W
Storage Temperature (Tstg)
-65 — 200 °C
Turn Off Time (toff)
1.2 µs
Turn On Time (ton)
600 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
BFX34 Box@500 Discontinued 60V,5A,870mW Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch EAR99 8541.21.0095 PBFREE

Resources

Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
BFX34.PDF Device Datasheet
Material Composition:TO-39 Material Composition
Package Detail Document:TO-39 Package Detail Document
Process Change Notice:CP322 REPLACES CP312 Process Change Notice
Product EOL Notice:BFX34 Product EOL Notice
Product Reliability Data:TO-39 Package Reliability Product Reliability Data

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AEM stands ready to assist with your latest design endeavors as your trusted partner.

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