BSV16-16

60V,1A,800mW Through-Hole Transistor-Small Signal (<=1A) PNP High Current

Case Type: TO-39

Base-Emitter On Voltage (VBE(ON))
1 V
Base-Emitter On Voltage (VBE(ON))
0.7 — 1.4 V
Collector-Emitter Breakdown Voltage (BVCES)
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Cutoff Current (ICES)
100 nA
Collector-Emitter Cutoff Current (ICES)
50 µA
Collector-Emitter Cutoff Current (ICEV)
50 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1 V
Collector-Emitter Voltage (VCES)
60 V
Collector-Emitter Voltage (VCEO)
60 V
Continuous Base Current (IB)
200 mA
Continuous Collector Current (IC)
1 A
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
30
DC Current Gain (hFE)
100 — 250
DC Current Gain (hFE)
35
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
50 nA
Emitter-Base Voltage (VEBO)
5 V
Fall Time (tf)
150 ns
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
30 pF
Power Dissipation (PD)
800 mW
Power Dissipation (PD)
5 W
Small Signal Current Gain (hfe)
20
Storage Temperature (Tstg)
-65 — 200 °C
Storage Time (ts)
500 ns
Thermal Resistance Junction-Ambient (ΘJA)
220 °C/W
Thermal Resistance Junction-Case (ΘJC)
35 °C/W
Turn On Time (ton)
500 ns

Ordering

Part Package Buy Status Description ECCN Code HTS Code Termination
BSV16-16 Box@500 Active 60V,1A,800mW Through-Hole Transistor-Small Signal (<=1A) PNP High Current EAR99 8541.21.0095 PBFREE

Resources

Analytical Test Report:Bond Wire Analytical Test Report
Analytical Test Report:Cap Analytical Test Report
Analytical Test Report:Header Analytical Test Report
Analytical Test Report:Header Assembly Analytical Test Report
Analytical Test Report:Pure Tin Solder Analytical Test Report
BSV15.PDF Device Datasheet
Material Composition:TO-39 Material Composition
Package Detail Document:TO-39 Package Detail Document
Product Reliability Data:TO-39 Package Reliability Product Reliability Data

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