BSX45
40V,1A,800mW Through-Hole Transistor-Small Signal (<=1A) NPN High Current
Case Type: TO-39
Technical Specifications
Similar Products with Selected SpecificationsTest Conditions
IC = 100 mA
VCE = 1 V
Test Conditions
IC = 500 mA
VCE = 1 V
Test Conditions
IC = 1 A
VCE = 1 V
Test Conditions
VCB = 60 V
Test Conditions
VCB = 60 V
TA = 150 °C
Test Conditions
IC = 1 A
IB = 100 mA
Test Conditions
VCE = 10 V
IC = 50 mA
f = 100 MHz
Test Conditions
VCE = 1 V
IC = 100 µA
Test Conditions
VCE = 1 V
IC = 100 mA
Test Conditions
VCE = 1 V
IC = 500 mA
Test Conditions
VEB = 5 V
Test Conditions
VEB = 500 mV
f = 1 MHz
Test Conditions
VCE = 5 V
IC = 100 µA
BW = 200 Hz
f = 1 kHz
Test Conditions
VCB = 10 V
f = 1 MHz
Test Conditions
VCC = 10 V
IC = 100 mA
IB1 = 5 mA
IB2 = 5 mA
Test Conditions
VCC = 10 V
IC = 100 mA
IB1 = 5 mA
Ordering
| Part | Package | Buy | Status | Description | ECCN Code | HTS Code | Termination |
|---|---|---|---|---|---|---|---|
| BSX45 | Box@500 | Active | 40V,1A,800mW Through-Hole Transistor-Small Signal (<=1A) NPN High Current | EAR99 | 8541.21.0095 | PBFREE |
Resources
| Item | Type |
|---|---|
| No matching documents found. | |
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Cap | Analytical Test Report |
| Analytical Test Report:Header | Analytical Test Report |
| Analytical Test Report:Header Assembly | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder | Analytical Test Report |
| BSX45-46-47_SERIES.PDF | Device Datasheet |
| Material Composition:TO-39 | Material Composition |
| Package Detail Document:TO-39 | Package Detail Document |
| Product Reliability Data:TO-39 Package Reliability | Product Reliability Data |
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